In-nSiC schottky photodiode ; Fabrication and Study
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In.electrical jolly rancher filled gummies characteristics included I-V(dark and illumination ) have been investigated.Ideality factor is 1.6 andbarrier height is 0.53 eV was calculated from I-V and Isc-Voccharacteristics, Ideality factor iphone 13